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Understanding the Role of Defects in Limiting the Minority Carrier Lifetime in SiC

著者名:
Doolittle, W. A.
Rohatgi, A.
Ahrenkiel, R.
Levi, D.
Augustine, G.
Hopkins, R. H.
さらに 1 件
掲載資料名:
Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
483
発行年:
1998
開始ページ:
197
出版情報:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993884 [1558993886]
言語:
英語
請求記号:
M23500/483
資料種別:
国際会議録

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