In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon

In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon

著者名:

Lee, J. W.

掲載資料名:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

483

発行年:

1998

開始ページ:

191

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

言語:

英語

請求記号:

M23500/483

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018454
シリーズID:	PA00000011
会議名:	Symposium on power semiconductor materials and devices
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.04

類似資料:

1 国際会議録 Comparison of Dry-Etch Techniques for GaN, InN, and AlN Shul, R. J., Vawter, G. A., Willison, C. G., Bridges, M. M., Lee, J. W., Pearton, S. J., Abernathy, C. R. MRS - Materials Research Society	7 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society
2 国際会議録 Selective Etching of Wide-Bandgap Nitrides Shul, R. J., Willison, C. G., Bridges, M. M., Han, J., Lee, J. W., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., … MRS - Materials Research Society	8 国際会議録 Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society
3 国際会議録 Chlorine-Based Plasma Etching of GaN Shul, R. J., Briggs, R. D., Pearton, S. J., Vartuli, C. B., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C. MRS - Materials Research Society	9 国際会議録 Magnetron Reactive Ion Etching of III-V Nitride Semiconductors McLane, G.F., Pearton, S.J., Abernathy, C.R. Electrochemical Society
4 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society	10 国際会議録 Comparison of ICI and Ibr for Dry Etching of III-Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Pearton, S. J., Abernathy, C. R., Shul, R. J. MRS - Materials Research Society
5 国際会議録 Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing Maeda, T., Lee, J. W., Abernathy, C. R., Pearton, S. J., Ren, F., Constantine, C., Shul, R. J. MRS - Materials Research Society	11 国際会議録 Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN Cho, Hyun, Maeda, T., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., Han, J., Ren, F. MRS - Materials Research Society
6 国際会議録 Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas Shul, R. J., Zhang, L., Willison, C. G., Han, J., Pearton, S. J., Hong, J., Abernathy, C. R., Lester, L. F. MRS - Materials Research Society	12 国際会議録 LOW DAMAGE MAGNETRON REACTIVE ION ETCHING OF GaAs McLane, G., Meyyappan, M., Cole, M. W., Lee, H. S., Lareau, R., Namaroff, M., Sasserath, J. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12