SiC Epitaxial Growth on Carbon

SiC Epitaxial Growth on Carbon

著者名:

掲載資料名:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

483

発行年:

1998

開始ページ:

129

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

言語:

英語

請求記号:

M23500/483

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018454
シリーズID:	PA00000011
会議名:	Symposium on power semiconductor materials and devices
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.04

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2 国際会議録 Correlation Between Oxide Breakdown and Defects in SiC Wafers Soloviev, S., Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society	8 国際会議録 Influence of the Crystal Thickness on the SiC PVT Growth Rate Cherednichenko, D.I., Khlebnikov, Y.I., Drachev, R.V., Khlebnikov, I.I., Sudarshan, T.S. Trans Tech Publications
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