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Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen

著者名:
Lucovsky, G.  
掲載資料名:
Materials reliability in microelectronics VII : symposium held April 8-12, 1997, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
473
発行年:
1997
開始ページ:
117
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993778 [1558993770]
言語:
英語
請求記号:
M23500/473
資料種別:
国際会議録

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