New Evidence for Deep Defect Relaxation in Hydrogenated Amorphous Silicon from Junction Capacitance Methods

New Evidence for Deep Defect Relaxation in Hydrogenated Amorphous Silicon from Junction Capacitance Methods

著者名:

掲載資料名:

Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

420

発行年:

1996

開始ページ:

679

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993235 [1558993231]

言語:

英語

請求記号:

M23500/420

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018448
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

類似資料:

1 国際会議録 Deep Defect Relaxation in Hydrogenated Amorphous Silicon: New Experimental Evidence and Implications Cohen, J. David, Zhong, Fan, Kwon, Daewon, Chen, C-C. MRS - Materials Research Society	7 国際会議録 CAPACITANCE STUDIES OF METASTABLE DEFECT CREATION IN HYDROGENATED AMORPHOUS SILICON Cohen, J.D., Mahavadi, K., Zellaman, K., Harbison, J.P., Delahoy, A.E. Materials Research Society
2 国際会議録 BAND OFFSETS AND ANOMALOUS DEEP DEFECT DISTRIBUTION AT THE HYDROGENATED AMORPHOUS SILICON-CRYSTALLINE SILICON INTERfACE VIA JUNCTION CAPACITANCE TEHCNIQUES Essick, J. M., Cohen, J. D. Materials Research Society	8 国際会議録 CONFIGURATIONAL RELAXATION OF THE D DEFECT IN HYDROGENATED AMORPHOUS SILICON AS A FUNCTION OF FERMI ENERGY Leen, T.M., Rasmussen, R.J., Cohen, J.D. Materials Research Society
3 国際会議録 Observation of Configurational Switching of Deep Defects in a-Si:H Using Thermal Step Insertion During Capacitance Transient Measurements Gardner, Adam D., Cohen, J. David MRS - Materials Research Society	9 国際会議録 Electrode Interdependence and Hole Capacitance in the Capacitance-Voltage Characteristics of Hydrogenated Amorphous Silicon Thin-Film Transistors Park, Hyuk-Ryeol, Cohen, J. David MRS - Materials Research Society
4 国際会議録 The Role of Deep Defect Relaxation Dynamics in Optical Processes in Hydrogenated Amorphous Silicon Zhong, F., Cohen, J. D. MRS - Materials Research Society	10 国際会議録 New Junction Capacitance Methods for the Study of Defect Distributions and Carrier Properties in the Copper Indium Diselenide Alloys Cohen, J. David, Heath, Jennifer T., Shafarman, William N. Materials Research Society
5 国際会議録 OBSERVATION OF DEEP DEFECT RELAXATION PROCESSES IN HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOY Zhong, F., Cohen, J.D. Materials Research Society	11 国際会議録 THE ROLE OF LATTICE RELAXATION IN THE COMPETITION BETWEEN OPTICAL AND THERMAL TRANSITIONS FROM GAP STATES IN HYDROGENATED AMORPHOUS SILICON Gelatos, A. V., Cohen, J. D., Harbison, J. P. Materials Research Society
6 国際会議録 LATTICE RELAXATION OF DEEP DEFECTS IN LIGHT-SOAKED N-TYPE HYDROGENATED AMORPHOUS SILICON Leen, T.M., Cohen, J.D. Materials Research Society	12 国際会議録 CAPACITANCE STUDIES OF LIGHT-INDUCED EFFECTS IN UNDOPED HYDROGENATED AMORPHOUS SILICON Zellama, K., Cohen, J.D., Harbison J.P. Materials Research Society

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