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Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

著者名:
Kim, C. S.
Noh, S. K.
Lee, H. J.
Cho, Y. K.
Kim, Y. I.
Park, H. S.
Kim, T. I.
さらに 2 件
掲載資料名:
Evolution of epitaxial structure and morphology : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
399
発行年:
1996
開始ページ:
449
出版情報:
Pittsburgh, Pennsylvania: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993020 [1558993029]
言語:
英語
請求記号:
M23500/399
資料種別:
国際会議録

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