Blank Cover Image

A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon

著者名:
Yang, S.-H.
Morris, S.
Tian, S.
Parab, K.
Tasch, A. F.
Echenique, P. M.
Capaz, R.
Joannopoulos, J.
さらに 3 件
掲載資料名:
Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
389
発行年:
1995
開始ページ:
77
出版情報:
Pittsburgh: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992924 [1558992928]
言語:
英語
請求記号:
M23500/389
資料種別:
国際会議録

類似資料:

1 国際会議録 An Accurate Monte Carlo Binary Collision Model for BF2 Implants into (100) Single-Crystal Silicon

Yang, S.-H., Morris, S., Tian, S., Morris, M., Parab, K., Obradovich, B., Tasch, A.

Electrochemical Society
7 国際会議録 A MORE EFFICIENT APPROACH FOR MONTE CARLO SIMULATION OF DEEPLY-CHANNELED IMPLANTED PROFILES IN SINGLE-CRYSTAL SILICON

Yang, Shyh-Horng, Lim, David, Morris, Steven J., Tasch, Al F.

MRS - Materials Research Society
2 国際会議録 Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through …

Morris, S., Lim, D., Yang, S. -H., Tian, S., Parab, K., Tasch, A. F.

MRS - Materials Research Society
8 国際会議録 An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV

Morris, S. J., Obradovic, B., Yang, S-H., Tasch, A. F., Rubin, L.

MRS - Materials Research Society
3 国際会議録 Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C., Jackson,J., Baummann,S., Tasch,A.F.

SPIE-The International Society for Optical Engineering
9 国際会議録 An Electronic Stopping Power Model in Single-Crystal Silicon from a Few KeV to Several MeV

Morris, S. J., Obradovic, B., Yang, S-H., Tasch, A. F., Rubin, L.

MRS - Materials Research Society
4 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F.

MRS - Materials Research Society
10 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT TWO-DIMENSIONAL MODEL FOR BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON

Klein, K. M., Park, C., Yang, S., Morris, S., Do, V., Tasch, A. F.

Materials Research Society
5 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F.

MRS - Materials Research Society
11 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT 2-D MODEL FOR BORON IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON

Morris, Steven J., Yang, Shyh-Horng, Lim, David H., Tasch, Al F.

MRS - Materials Research Society
6 国際会議録 A Two-Dimensional, Accurate and Computationally Efficient Model for Boron Implantation through Oxide Layers into Silicon

Morris, S., Lim, D., Yang, S.-H., Tian, S., Parab, K., Tasch, A.F.

Electrochemical Society
12 国際会議録 Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, BF2, and As Ion Implantation

Parab, K. B., Yang, S. -H., Morris, S. J., Tian, S., Morris, M., Obradovich, B., Tasch, A. F., Kamenitsa, D., Simonton, …

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12