Properties of Point-Defects in Si for Process Modeling | 東京工業大学附属図書館文献データベース

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Properties of Point-Defects in Si for Process Modeling

著者名:

Gossmann, H. J.

Rafferty, C. S.

Eaglesham, D. J.

Thompson, M. O.

さらに 4 件

掲載資料名:

Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

389

発行年:

1995

開始ページ:

3

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992924 [1558992928]

言語:

英語

請求記号:

M23500/389

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018445
シリーズID:	PA00000011
会議名:	Symposium on modeling and simulation of thin-film processing
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.20

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2 国際会議録 Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon Pelaz, L., Gilmer, G. H., Jaraiz, M., Gossmann, H-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M. MRS - Materials Research Society	8 国際会議録 Diffusion of Si Self-Interstitials in the Presence of Carbon-Related Interstitial Traps Gossman, H.-J., Stolk, P.A., Eaglehsam, D.J., Gilmer, G.H., Poate, J.M. Electrochemical Society
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