Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

著者名:

Chen,S. ( North China Research Institute of Electro-Optics )
He,X.
Lin,L.

掲載資料名:

Detectors, focal plane arrays, and applications : 4-5 November 1996, Beijing, China

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2894

発行年:

1996

開始ページ:

224

終了ページ:

229

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422958 [0819422959]

言語:

英語

請求記号:

P63600/2894

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018424
シリーズID:	PA00000029
会議名:	Photonics China : Detectors, Focal Plane Arrays, and Applications
回次:	1996
会議開催地:	Beijing, China
会議開催年:	1996.11.04-1996.11.05

類似資料:

1 国際会議録 Molecular beam epitaxy growth of CdTe on Si(211) Chen, L., Wang, Y. Z., Wu, Y., Wu, J., Yu, M. F., Qiao, Y. M., He, L. SPIE - The International Society of Optical Engineering	7 国際会議録 Optical Characterization of Znl-xCdxO Alloys Grown by Molecular-Beam Epitaxy I. A. Buyanova, X. Wang, W. M. Chen, M. Izadifard, D. Norton, S. J. Pearton, A. V. Osinsky, J. Dong, A. M. Dabiran Electrochemical Society
2 国際会議録 HgTe-CdTe SUPERLATTICE AND HgCdTe EPILAYER DEVICE STRUCTURES GROWN BY PHOTON-ASSISTED MOLECULAR BEAM EPITAXY Myers, T.H., Yanka, R.W., Mohnkern, L.M., Harris, K.A., Dietz, D.W., Dudoff, G.K., Girouard, K.M., Wang, S.C.H. Materials Research Society	8 国際会議録 MOLECULAR BEAM EPITAXY OF LOW TEMPERATURE GROWN GaAs PHOTOCONDUCTORS Dykaar, D.R., Eaglesham, D.J., Keil, U.D., Greene, B.I., Saeta, P.N., Pfeiffer, L.N., Kopf, R.F., Darack, S.B., West, … Materials Research Society
3 国際会議録 Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy Kim,G.H., Lee,J., You,H.Y., Moon,Y.M., Choi,J.B., Leem,J.-Y. SPIE-The International Society for Optical Engineering	9 国際会議録 THE PHOTOLUMINESCENCE AND TEM STUDIES OF PATTERNED GaAs FILMS ON Si SUBSTRATE GROWN BY MOLECULAR BEAM EPITAXY Lee, Henry P., Huang, Yi-He, Liu, Xiaoming, Lin, Hong, Smith, John S., Weber, Eicke R., Yu, Peter, Wang, Shyh, … Materials Research Society
4 国際会議録 TIN-DOPING INDUCED DEFECTS IN GaAs FILSM GROWN BY MOLECULAR BEAM EPITAXY Chen, S. H., Enquist, P., Carter, C. B. Materials Research Society	10 国際会議録 Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy Kim, C. S., Noh, S. K., Lee, H. J., Cho, Y. K., Kim, Y. I., Park, H. S., Kim, T. I. MRS - Materials Research Society
5 国際会議録 CHARACTERIZATION OF HgCdTe EPILAYERS AND HgTe-CdTe SUPERLATTICE SUTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY Myers, T. H., Yanka, R. W., Karins, J. P, Harris, K. A., Cook, J. W., Schetzina, J. F. Materials Research Society	11 国際会議録 Characterization of In doped CdTe grown by molecular beam epitaxy Kang, T.W., Leem, J.H., Hou, Y.B., Ryu, Y.S., Lee, H.Y., Jeon, H.C., Hyun, J.K., Kang, C.K., Kim, T.W. SPIE
6 国際会議録 COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY Wu, B. J., Wang,, K. L., Mii, Y. J,, Yoon, Y. S., Wu,. A. T., George,T.,, Weber, E. Materials Research Society	12 国際会議録 Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs Hierro, A., Kwon, D., Ringel, S. A., Brillson, L. J., Young, A. P., Franciosi, A. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12