Ultra-Shallow N+P and P+N Junction Formation Using Low Energy High Dose As+ and BF2+ Implantation and Rapid Thermal Anneal

Ultra-Shallow N+P and P+N Junction Formation Using Low Energy High Dose As+ and BF2+ Implantation and Rapid Thermal Anneal

著者名:

掲載資料名:

Semiconductor Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2733

発行年:

1996

開始ページ:

487

終了ページ:

489

出版情報:

Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa

ISSN:

0277786X

ISBN:

9780819421142 [0819421146]

言語:

英語

請求記号:

P63600/2733

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018408
シリーズID:	PA00000029

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