The Comparison of SOI Transistor Models
- 著者名:
- 掲載資料名:
- Semiconductor Devices
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 2733
- 発行年:
- 1996
- 開始ページ:
- 11
- 終了ページ:
- 18
- 出版情報:
- Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa
- ISSN:
- 0277786X
- ISBN:
- 9780819421142 [0819421146]
- 言語:
- 英語
- 請求記号:
- P63600/2733
- 資料種別:
- 国際会議録
類似資料:
Narosa Publishing House |
Narosa Publishing House |
Electrochemical Society |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
9
国際会議録
Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime
Electrochemical Society |
Kluwer Academic Publishers |
SPIE-The International Society for Optical Engineering, Narosa |
Electrochemical Society |
11
国際会議録
A. Comparison of C-V and I-V Characteristics of Partially and Fully Depleted Gate-Controlled Diodes
Narosa Publishing House |
SPIE - The International Society for Optical Engineering |
12
国際会議録
Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors
Electrochemical Society |