Optimization of active-layer and cavity design parameters for low-threshold GaN/AIGaN double-heterostructure diode lasers

Optimization of active-layer and cavity design parameters for low-threshold GaN/AIGaN double-heterostructure diode lasers

著者名:

Osinski,M. ( Univ.of New Mexico )
Eliseev,P.G.

掲載資料名:

Physics and Simulation of Optoelectronic Devices IV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2693

発行年:

1996

開始ページ:

109

終了ページ:

120

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420671 [0819420670]

言語:

英語

請求記号:

P63600/2693

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018404
シリーズID:	PA00000029
会議名:	Photonics West : Physics and Simulation of Optoelectoronic Devices
回次:	1996 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	1996.01.29-1996.02.02

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