Recent progress in AIGaN/GaN laser structures on 6H-SiC

Recent progress in AIGaN/GaN laser structures on 6H-SiC

著者名:

Bulman,G.E. ( Cree Research,Inc. )

掲載資料名:

Physics and Simulation of Optoelectronic Devices IV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2693

発行年:

1996

開始ページ:

57

終了ページ:

63

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420671 [0819420670]

言語:

英語

請求記号:

P63600/2693

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018404
シリーズID:	PA00000029
会議名:	Photonics West : Physics and Simulation of Optoelectoronic Devices
回次:	1996 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	1996.01.29-1996.02.02

類似資料:

1 国際会議録 Nitride-based emitters on SiC substrates Edmond,J.A., Kong,H.-S., Leonard,M.T., Doverspike,K., Bulman,G.E., Weeks,W., Irvine,K.G., Dmitriev,V.A. SPIE-The International Society for Optical Engineering	7 国際会議録 Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure Sukhoveyev,V., Ivantsov,V., Zubrilov,A., Nikolaev,V., Nikitina,I., Bougrov,V., Tsvetkov,D., Dmitriev,V. Trans Tech Publications
2 国際会議録 GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC Bulman,G.E., Kong,H.S., Leonard,M.T. SPIE - The International Society for Optical Engineering	8 国際会議録 InGaN/GaN MQW SCH lasers grown on SiC Bulman,G.E., Doverspike,K., Haberern,K.W., Dieringer,H., Kong,H.S., Edmond,J.A., Song,Y.-K., Kuball,M., Nurmikko,A.V. SPIE - The International Society for Optical Engineering
3 国際会議録 InGaN/GaN lasers grown on SiC (Invited Paper) Doverspike,K., Bulman,G.E., Sheppard,S.T., Kong,H.S., Leonard,M.T., Dieringer,H., Edmond,J.A., More,K.L., Song,Y.-K., … SPIE-The International Society for Optical Engineering	9 国際会議録 AlGaN/GaN/AlGaN Double-Heterojunction Blue LEDs on 6H-SiC Substrates Kong, Hua-Shuang, Leonard, Michelle, Bulman, Gary, Negley, Gerry, Edmond, John MRS - Materials Research Society
4 国際会議録 AIN/GaN and AlGaN/GaN Heterostructures Grown by HVPE on SiC Substrates Melnik, Yu. V., Nikolaev, A. E., Stepanov, S. I., Zubrilov, A. S., Nikitina, I. P., Vassilevski, K. V., Tsvetkov, D. V., … MRS - Materials Research Society	10 国際会議録 HVPE GaN and AIGaN Substrates for Homoepitaxy Melnik,Yu., Nikolaev,A., Stepanov,S., Kikitina,I., Vassilevski,K., Ankudinov,A., Musikhin,Yu., Dmitriev,V. Trans Tech Publications
5 国際会議録 GaN Three Dimensional Nanostructures Dmitriev, V., Irvine, K., Zubrilov, A., Tsvetkov, D., Nikolaev, V., Jakobson, M., Nelson, D., Sitnikova, A. MRS - Materials Research Society	11 国際会議録 Status of Nitride-Based Light-Emitting and Laser Diodes on SiC Doverspike, K., Bulman, G. E., Sheppard, S. T., Kong, H. S., Leonard, M., Dieringer, H., Weeks, T. W., Jr., Edmond, J., … MRS - Materials Research Society
6 国際会議録 Pendeoepitaxy of GaN and In GaN LEDs on SiC Kong, H. S., Edmond, J., Doverspike, K., Emerson, D., Bulman, G., Haberern, K., Dieringer, H., Slater, D. Trans Tech Publications	12 国際会議録 Growth of SiC and GaN on Porous Buffer Layers Mynbaeva, M., Savkina, N. S., Tregubova, A. S., Scheglov, M. P., Lebedev, A. A., Zubrilov, A., Titkov, A., Kryganovski, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12