Effect of p-dopant positioning in low-threshold,InGaAs/GaAs/AlGaAs,MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications

Effect of p-dopant positioning in low-threshold,InGaAs/GaAs/AlGaAs,MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications

著者名:

Dion,M.M. ( National Research Council of Canada )

掲載資料名:

Fabrication, testing, and reliability of semiconductor lasers : 31 January-1 February, 1996, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2683

発行年:

1996

開始ページ:

8

終了ページ:

17

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420572 [0819420573]

言語:

英語

請求記号:

P63600/2683

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018403
シリーズID:	PA00000029
会議名:	Photonics West : Fabrication, testing, and reliability of semiconductor lasers
回次:	1996
会議開催地:	San Jose, CA, USA
会議開催年:	1996.01.31-1996.02.01

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