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Positron Lifetime Study on Semiconductor Thin Films

著者名:
Suzuki,R.
Ohdaira,T.
Uedono,A.
Ishibashi,S.
Matsuda,A.
Yoshida,S.
Ishida,Y.
Niki,S.
Fons,P.J.
Mikado,T.
Yamazaki,T.
Tanigawa,S.
Cho,Y.K.
さらに 8 件
掲載資料名:
Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997
シリーズ名:
Materials science forum
シリーズ巻号:
255-257
発行年:
1997
開始ページ:
714
終了ページ:
717
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497799 [087849779x]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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3 国際会議録 Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement

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