Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement
- 著者名:
Cho,Y.K. Leem,J.Y. Lee,C. Noh,S.K. Suzuki,R. Odaira,T. Mikado,T. - 掲載資料名:
- Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 255-257
- 発行年:
- 1997
- 開始ページ:
- 701
- 終了ページ:
- 703
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497799 [087849779x]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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Development of High-Rate Age-Momentum Correlation System with a Variable-Energy Pulsed Positron Beam
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