Depth Profiling of Defects in Argon Irradiated Silicon Using Positron Beam Facility at Kalpakkam

Depth Profiling of Defects in Argon Irradiated Silicon Using Positron Beam Facility at Kalpakkam

著者名:

掲載資料名:

Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997

シリーズ名:

Materials science forum

シリーズ巻号:

255-257

発行年:

1997

開始ページ:

650

終了ページ:

652

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497799 [087849779x]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018365
シリーズID:	PA00000012
会議名:	International Conference on Positron Annihilation
回次:	11th
会議開催地:	Kansas City, MO, USA
会議開催年:	1997.05.25-1997.05.30

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