An Analytical Approach for Studying Diffusion and Drift Effects of Positrons at the Metal/Semi-Insulating GaAs Interface
- 著者名:
- 掲載資料名:
- Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 255-257
- 発行年:
- 1997
- 開始ページ:
- 539
- 終了ページ:
- 541
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497799 [087849779x]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
2
国際会議録
Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
GaN Thin Films on SiC Substrates Studied Using Variable Energy Positron Annihilation Spectroscopy
Trans Tech Publications |
Trans Tech Publications |
11
国際会議録
Changes in the Positron-Electron Momentum Distribution in GaAs Brought about by Chopped Light
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |