The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs During Rapid Thermal Annealing Studied by Slow Positrons

The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs During Rapid Thermal Annealing Studied by Slow Positrons

著者名:

掲載資料名:

Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary

シリーズ名:

Materials science forum

シリーズ巻号:

105-110

発行年:

1992

巻:

Pt.3

開始ページ:

1491

終了ページ:

1494

出版情報:

Aederlmannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496365 [087849636x]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018358
シリーズID:	PA00000012
会議名:	International Conference on Positron Annihilation
回次:	9th
会議開催地:	Szombathely, Hungary
会議開催年:	1991.08.26-1991.08.31

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2 国際会議録 The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam Fujii,S., Wei,L., Tanigawa,S. Trans Tech Publications	8 国際会議録 The Study of Surface State of III-V Compound Semiconductors by Slow Positrons Wei,L., Lee,J.L., Tanigawa,S., Oigawa,H., Nannichi,Y. Trans Tech Publications
3 国際会議録 THE STUDY OF Si, Se AND O-IMPLANTED GaAs BY SLOW POSITRONS Fujii, S., Shikata, S., Wei, L., Tanigawa, S. Materials Research Society	9 国際会議録 Study of Point Defects in Impurity-Doped ZnSe by a Monoenergetic Positron Beam Miyajima,T., Wei,L., Tanigawa,S., Okuyama,H., Akimoto,K., Mori,Y. Trans Tech Publications
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