Vacancy-Type Defects in Si+-and B+-Implanted Si Probed by a Monoenergetic Positron Beam

Vacancy-Type Defects in Si+-and B+-Implanted Si Probed by a Monoenergetic Positron Beam

著者名:

Uedono,A.

掲載資料名:

Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary

シリーズ名:

Materials science forum

シリーズ巻号:

105-110

発行年:

1992

巻:

Pt.3

開始ページ:

1479

終了ページ:

1482

出版情報:

Aederlmannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496365 [087849636x]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018358
シリーズID:	PA00000012
会議名:	International Conference on Positron Annihilation
回次:	9th
会議開催地:	Szombathely, Hungary
会議開催年:	1991.08.26-1991.08.31

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