Depth Profiling of Defects In Low Temperature MBE-Grown Silicon
- 著者名:
Jackrnan,T.E. Aers,C.C. McCailrey,J.P. Britton,D. Willutzkl,P. Schultz,P.J. Simpson,P.J. Mascher,P. - 掲載資料名:
- Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 105-110
- 発行年:
- 1992
- 巻:
- Pt.1
- 開始ページ:
- 301
- 終了ページ:
- 308
- 出版情報:
- Aederlmannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496365 [087849636x]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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Materials Research Society |
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12
国際会議録
PHOTOELECTRONIC PROPERTIES OF LOW TEMPERATURE GaAs GROWN ON SILICON AND GaAs SUBSTRATES BY MBE
Materials Research Society |