Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems | 東京工業大学附属図書館文献データベース

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Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems

著者名:

Hays, D.C. ( University of Florida )

Abernathy, C.R.

さらに 5 件

掲載資料名:

Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

573

発行年:

1999

開始ページ:

281

終了ページ:

286

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994805 [1558994807]

言語:

英語

請求記号:

M23500/573

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018349
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor surface passivation and novel device processing
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.07

類似資料:

1 国際会議録 Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S. Electrochemical Society	7 国際会議録 Dry Etching of InGaP and AlInP in CH4/H2/Ar Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society
2 国際会議録 Comparison of Dry-Etch Techniques for GaN, InN, and AlN Shul, R. J., Vawter, G. A., Willison, C. G., Bridges, M. M., Lee, J. W., Pearton, S. J., Abernathy, C. R. MRS - Materials Research Society	8 国際会議録 Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN Cho, Hyun, Maeda, T., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., Han, J., Ren, F. MRS - Materials Research Society
3 国際会議録 High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J. Electrochemical Society	9 国際会議録 IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R. Materials Research Society
4 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society	10 国際会議録 Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He Cho, H., Hahn, Y. B., Hays, D. C., Jung, K. B., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J. MRS - Materials Research Society
5 国際会議録 REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2 Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S. Materials Research Society	11 国際会議録 Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source Cole, M.W., Han, W.Y., Pfeffer, R.L., Eckart, D.W., Pang, S.W., Ko, K.K., Ren, F., Hobson, W.S., Lothian, J.R., Lopata, … Electrochemical Society
6 国際会議録 The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides Vartuli, C.B., Pearton, S.J., Abernathy, C.R., Shul, R.J., Ren, F. Electrochemical Society	12 国際会議録 Dry Etching of MRAM Structures Pearton, S.J., Cho, H., Jung, K.B., Childress, J.R., Sharifi, F., Marburger, J. Materials Research Society

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