Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric
- 著者名:
Ren, F. ( University of Florida ) Lothian, J.R. Pearton, S.J. Wilson, R.G. LaRoche, J.R. Lee, J.W. Johnson, D. Zavada, J.M. - 掲載資料名:
- Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 573
- 発行年:
- 1999
- 開始ページ:
- 183
- 終了ページ:
- 187
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994805 [1558994807]
- 言語:
- 英語
- 請求記号:
- M23500/573
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
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