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Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric

著者名:
Ren, F. ( University of Florida )
Lothian, J.R.
Pearton, S.J.
Wilson, R.G.
LaRoche, J.R.
Lee, J.W.
Johnson, D.
Zavada, J.M.
さらに 3 件
掲載資料名:
Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
573
発行年:
1999
開始ページ:
183
終了ページ:
187
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994805 [1558994807]
言語:
英語
請求記号:
M23500/573
資料種別:
国際会議録

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