Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition

Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition

著者名:

Lee, J.W. ( Plasma-Therm Inc. )

掲載資料名:

Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

573

発行年:

1999

開始ページ:

69

終了ページ:

79

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994805 [1558994807]

言語:

英語

請求記号:

M23500/573

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018349
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor surface passivation and novel device processing
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.07

類似資料:

1 国際会議録 Inductively-Coupled Plasma Deposition of Low Temperature Silicon Dioxide and Silicon Nitride Films for III-V Applications Mackenzie, K.D., Lee, J.W, Johnson, D.J. Electrochemical Society	7 国際会議録 New optical sensor for real-time in-situ endpoint monitoring during dry etching of III-V ternary multistack layers Liddane,K.J., Benferhat,R., Lee,J., Westerman,R., Johnson,D.J., Donohue,J.F., Sasserath,J.N., Pearton,S.J. SPIE - The International Society for Optical Engineering
2 国際会議録 Effects of N2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors * Hsu, C.H., Chen, C.C., Ren, B.Luo.F., Pearton, S.J., Abernathy, C.R., Lee, J.W., Mackenzie, K.D., Sasserath, J. Electrochemical Society	8 国際会議録 Hydrogen Incorporation into III-V Nitrides During Processing Pearton, S.J., Shul, R.J., Wilson, R.G., Ren, F., Zavada, J.M., Abernathy, C.R., Vartuli, C.B., Lee, J.W., Mileham, … Electrochemical Society
3 国際会議録 Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation Ren, F., LaRoche, J., Anderson, T., Pearton, S.J., Lee, J.W., Johnson, D., Lothian, J.R., Lin, J., Weiner, J.S., Shul, … Electrochemical Society	9 国際会議録 Study of N2 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System Lee, Jewon, Mackenzie, Ken D, Johnson, Dave, Lambert, Eric, Dang, Gerard, LaRoche, Jeff, Ren, Fan, Toussaint, Ernsts, … American Institute of Chemical Engineers
4 国際会議録 Low Temperature Silicon Nitride Deposition by Inductively Coupled Plasma CVD for GaAs Applications H. Kim, Y. Lee, Y. Ra, G. Li, J. Yota Electrochemical Society	10 国際会議録 LOW-PRESSURE CHEMICAL VAPOR DEPOSITION OF POLYCRYSTALLINE SILICON AND SILICON DIOXIDE BY RAPD THERMAL PROCESSING Ozt-rk, Mehmet C., Worman, Jimmie J., Zhong, Yu-Lin, Ren, Xiao-Wei, Miller, Roderick M., Johnson, Scot F., Grider, … Materials Research Society
5 国際会議録 The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150℃ Kang, Su-hyuk, Lee, Min-Cheol, Moon, Kook-Chul, Han, Min-koo Materials Research Society	11 国際会議録 Plasma Enhanced Chemical Vapor Deposition of Silicon Dioxide and Nitride Films Using the Enviromnentally Benign Precursor Diethylsilane Chen, L., Levy, R.A., Grow, J.M., Yu, Y. Electrochemical Society
6 国際会議録 Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs Shul, Randy J., Zhang, L., Baca, A.G., Willison, Christi G., Hans, J., Pearton, S.J., Lee, K.P., Ren, F. Materials Research Society	12 国際会議録 Inductively-Coupled Plasma Etching of NiFe and NiFeCo Jung, K. B., Childress, J. R., Pearton, S. J., Jenson, M., Hurst, A. T., Jr., Johnson, D. MRS - Materials Research Society

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