The (Ga2O3)1-x(Gd2O3)x oxides with x=0-1.0 for GaAs passivation

The (Ga2O3)1-x(Gd2O3)x oxides with x=0-1.0 for GaAs passivation

著者名:

Kwo, J. ( Bell Laboratories )

掲載資料名:

Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

573

発行年:

1999

開始ページ:

57

終了ページ:

67

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994805 [1558994807]

言語:

英語

請求記号:

M23500/573

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018349
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor surface passivation and novel device processing
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.07

類似資料:

1 国際会議録 Single Crystal Gd2O3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation Hong, M., Kwo, J., Kortan, A. R., Mannaerts, J. P., Wu, M. C., Lay, T. S., Sergent, A. M. MRS - Materials Research Society	7 国際会議録 Advances in GaAs MOSFET's using Ga2O3(Gd2O3) as gate oxide Wang, Y.C., Hong, M., Kuo, J.M., Mannaerts, J.P., Kwo, J., Tsai, H.S., Krajewski, J.J., Weiner, J.S., Chen, Y.K., Cho, … Materials Research Society
2 国際会議録 Structure of single-crystal Gd2O3 films on GaAs(100) Kortan, A.R., Hong, M., Kwo, J., Mannaerts, J.P., Kopylov, N. Materials Research Society	8 国際会議録 GaN/Gd2O3/GaN Single Crystal Heterostructure* Hong, M, Kwo, J., Chu, S.N.G., Mannaerts, J.P., Dabbahg, G., Kortan, A.R., Ng, H.M, Cho, A.Y., Anseim, K.A., Lee, C.M, … Electrochemical Society
3 国際会議録 GaAs MOSFET - Achievements and Challenges Hong, M., Baillargeon, J.N., Kwo, J., Kortan, A.R., Mannaerts, J.P., Cho, A.Y., Wang, Y.C., Ren, F. Electrochemical Society	9 国際会議録 Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications Lay,T.S., Hong,M., Mannaerts,J.P., Liu,C.T., Kwo,J.R., Ren,F., Marcus,M.A., Ng,K.K., Chen,Y.K., Chou,L.J., Hsieh,K.C., … SPIE-The International Society for Optical Engineering
4 国際会議録 Epitaxial Growth and Structure of Thin Single Crystal γ-Al2O3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum Hong, M., Kortan, A.R., Kwo, J., Mannaerts, J.P., Wu, S.Y. Materials Research Society	10 国際会議録 Demonstration of Enhancement-Mode p-Channel GaAs MOSFETs with Ga2O3 (Ga2O3) passivation Ren, F., Hong, M.W., Hobson, W.S., Kuo, J.M., Lothian, J.R., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, … Electrochemical Society
5 国際会議録 Structure of Sc2O3 Films Epitaxially Grown on a-Al2O3 (111) Kortan, A.R., Hong, M., Kwo, J., Chang, P., Chen, C.P., Mannaerts, J.P., Liou, S.H. Materials Research Society	11 国際会議録 Energy band offsets at a Ga2O3(Gd2O3)-GaAs interface Lay, T.S., Hong, M., Kwo, J., Mannaerts, J.P., Hung, W.H., Huang, D.J. Materials Research Society
6 国際会議録 Ga2O3(Gd2O3) as a Gate Dielectric for GaAs MOSFETs Hong, M., Kwo, J., Liu, C.T., Marcus, M.A., Lay, T.S., Ren, F., Mannaerts, J.P., Ng, K.K., Chen, Y.K., Chou, L.J., … Electrochemical Society	12 国際会議録 EPITAXIAL FILMS OF HIGH TC OXIDE SUPERCONDUCTORS Y1Ba2Cu3O7 GROWN ON SrTiO3 BY MOLECULAR BEAM EPITAXY Kwo, J., Hsieh, T. C., Hong, M., Fleming, R. M., Liou, S. H., Davidson, B. A. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12