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Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

著者名:
Obradovic,B.J. ( Univ.of Texas at Austin )
Morris,S.J. ( Univ.of Texas at Austin )
Morris,M.F. ( Univ.of Texas at Austin )
Tian,S. ( Univ.of Texas at Austin )
Wang,G. ( Univ.of Texas at Austin )
Beardmore,K. ( Los Alamos National Lab. )
Snell,C. ( Los Alamos National Lab. )
Jackson,J. ( Eaton Corp. )
Baummann,S. ( Evans Texas )
Tasch,A.F. ( Univ.of Texas at Austin )
さらに 5 件
掲載資料名:
Microelectronic Device Technology : 1-2 October 1997, Austin, Texas
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3212
発行年:
1997
開始ページ:
342
終了ページ:
353
出版情報:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426444 [081942644X]
言語:
英語
請求記号:
P63600/3212
資料種別:
国際会議録

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