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Hot-carrier degradation for deep-submicron N-MOSFETs introduced by back-end processing

著者名:
Lie,D.Y.C. ( Rockwell Corp. )
Xia,W. ( Rockwell Corp. )
Yota,J. ( Rockwell Corp. )
Joshi,A.B. ( Rockwell Corp. )
Zwingman,R. ( Rockwell Corp. )
Williams,R. ( Rockwell Corp. )
Kerametlian,V. ( Rockwell Corp. )
Cerney,D. ( Rockwell Corp. )
Min,B.W. ( Univ.of Texas at Austin )
Kwong,D.L. ( Univ.of Texas at Austin )
さらに 5 件
掲載資料名:
Microelectronic Device Technology : 1-2 October 1997, Austin, Texas
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3212
発行年:
1997
開始ページ:
258
終了ページ:
267
出版情報:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426444 [081942644X]
言語:
英語
請求記号:
P63600/3212
資料種別:
国際会議録

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