0.18-ｦﾌm gate length CMOS devices with N + polycide gate for 2.5-V application

0.18-ｦﾌm gate length CMOS devices with N + polycide gate for 2.5-V application

著者名:

Choi,J.Y. ( Integrated Device Technology,Inc. )
Zhang,E. ( Integrated Device Technology,Inc. )
Han,C.-C. ( Integrated Device Technology,Inc. )

掲載資料名:

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3212

発行年:

1997

開始ページ:

220

終了ページ:

225

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426444 [081942644X]

言語:

英語

請求記号:

P63600/3212

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018328
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Device Technology
回次:	1997
会議開催地:	Austin, TX, USA
会議開催年:	1997.10.01-1997.10.02

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