Prediction of CMOS transistor performance at 0.10-ｦﾌm gate length using tuned simulations

Prediction of CMOS transistor performance at 0.10-ｦﾌm gate length using tuned simulations

著者名:

Sridhar,S. ( Texas Instruments Inc. )
Mehrotra,M. ( Texas Instruments Inc. )
Rodder,M. ( Texas Instruments Inc. )
Nandakumar,M. ( Texas Instruments Inc. )
Chen,I.-C. ( Texas Instruments Inc. )

掲載資料名:

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3212

発行年:

1997

開始ページ:

208

終了ページ:

219

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426444 [081942644X]

言語:

英語

請求記号:

P63600/3212

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018328
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Device Technology
回次:	1997
会議開催地:	Austin, TX, USA
会議開催年:	1997.10.01-1997.10.02

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