Dry etching resistance of methacrylate polymers for ArF excimer laser lithography

Dry etching resistance of methacrylate polymers for ArF excimer laser lithography

著者名:

Ohfuji,T. ( Association of Super-Advanced Electronics Technologies (Japan) )

Endo,M. ( Association of Super-Advanced Electronics Technologies (Japan) )

Takahashi,M. ( Association of Super-Advanced Electronics Technologies (Japan) )

Naito,T. ( Association of Super-Advanced Electronics Technologies (Japan) )

Tatsumi,T. ( Association of Super-Advanced Electronics Technologies (Japan) )

Kuhara,K. ( Association of Super-Advanced Electronics Technologies (Japan) )

Sasago,M. ( Association of Super-Advanced Electronics Technologies (Japan) )

さらに 2 件

掲載資料名:

Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3333

発行年:

1998

巻:

Part 1

開始ページ:

595

終了ページ:

600

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427786 [0819427780]

言語:

英語

請求記号:

P63600/3333

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018317
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	1998 : 15th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1998.02.23-1998.02.25

類似資料:

1 国際会議録 Negative-type chemically amplified resists for ArF excimer laser lithography Naito,T., Takahashi,M., Ohfuji,T., Sasago,M. SPIE-The International Society for Optical Engineering	7 国際会議録 Effect of the dissolution contrast on the process margin in 193-nm lithography Takahashi,M., Kishimura,S., Naito,T., Ohfuji,T., Sasago,M. SPIE-The International Society for Optical Engineering
2 国際会議録 ArF excimer laser lithography with bottom antireflective coating Kishimura,S., Takahashi,M., Nakazawa,K., Ohfuji,T., Sasago,M., Uematsu,M., Ogawa,T., Ohtsuka,H. SPIE-The International Society for Optical Engineering	8 国際会議録 High-silicon-concentration TSI process for 193-nm lithography Mori,S., Morisawa,T., Matsuzawa,N.N., Kaimoto,Y., Endo,M., Matsuo,T., Kuhara,K., Ohfuji,T., Sasago,M. SPIE-The International Society for Optical Engineering
3 国際会議録 Recent advantages of bilevel resists based on silsesquioxane for ArF lithography Morisawa,T., Matsuzawa,N.N., Mori,S., Kaimoto,Y., Endo,M., Ohfuji,T., Kuhara,K., Sasago,M. SPIE-The International Society for Optical Engineering	9 国際会議録 Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography Ohfuji,T., Maeda,K., Nakano,K., Hasegawa,E. SPIE-The International Society for Optical Engineering
4 国際会議録 Polymer design in surface modification resist process for ArF lithography Matsuo,T., Endo,M., Mori,S., Kuhara,K., Sasago,M., Shirai,M., Tsunooka,M. SPIE-The International Society for Optical Engineering	10 国際会議録 Excimer Laser Lithography Nomura, N., Yamashita, K., Endo, M., Sasago, M. Electrochemical Society
5 国際会議録 Acid amplification of chemically amplified resists for 193-nm lithography Ohfuji,T., Takahashi,M., Kuhara,K., Ogawa,T., Ohtsuka,H., Sasago,M., Ichimura,K. SPIE-The International Society for Optical Engineering	11 国際会議録 Novel strategy for the design of highly transparent ArF resists with excellent dry etch resistance Zhao,W., Ohfuji,T., Sasago,M., Tagawa,S. SPIE-The International Society for Optical Engineering
6 国際会議録 High-sensitivity silylation process for 193-nm lithography Mori,S., Kuhara,K., Ohfuji,T., Sasago,M. SPIE-The International Society for Optical Engineering	12 国際会議録 Negative-tone TSI process for 193-nm lithography Kuhara,K., Mori,S., Kaimoto,Y., Morisawa,T., Ohfuji,T., Sasago,M. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12