Blank Cover Image

Intersubband Transitions in p-Type SiGe/Si Quantum Wells for Normal Incidence Infrared Detection

著者名:
Karunasiri G. P. R.  
掲載資料名:
Quantum well intersubband transition physics and devices
シリーズ名:
NATO ASI series. Series E, Applied sciences
シリーズ巻号:
270
発行年:
1994
開始ページ:
237
終了ページ:
250
総ページ数:
14
出版情報:
Dordrecht: Kluwer Academic Publishers
ISSN:
0168132X
ISBN:
9780792328773 [0792328779]
言語:
英語
請求記号:
N11482/270
資料種別:
国際会議録

類似資料:

1 国際会議録 Quantum Well Engineering for Intersubband Transitions - General Conduction Band Extrema and Valence Valley

Wang L. K., Chun K. S., Karunasiri G. P. R.

Plenum Press
7 国際会議録 Recent progress in quantum well infrared detectors (Invited Paper)

Karunasiri,G.

SPIE-The International Society for Optical Engineering
2 国際会議録 Normal-Incidence Intersubband Absorption in N-Type Ellipsoidal-Valley Quantum Well for Infrared Detection

Xu, Wenlan, Shen, S. C., Fu, Ying, Willander, M.

Electrochemical Society
8 国際会議録 Normal Incidence N-Type Direct Gap Quantum Well Infrared Photodetector

Tidrow, M.Z., Jiang, Xudong, Chiang, J.C., Li, Sheng S., Kennerly, S.W.

Electrochemical Society
3 国際会議録 Toward the Design of Optimized GaAs/AIGaAs P-Type Multiple-Quantum Wells for Infrared Detection at Normal Incidence: Model and Experiment

Szmulowicz, F., Liu, H.C., Brown, G.J., Wasilewski, Z.R., Buchanan, M.

Electrochemical Society
9 国際会議録 Terahertz emitting devices based on intersubband transitions in SiGe quantum wells

Adam, T.N., Troeger, R.T., Ray, S.K., Lehmann, U., Kolodzey, J.

SPIE-The International Society for Optical Engineering
4 国際会議録 GaAs/AlGaAs p-type multiple quantum wells for infrared detection at normal incidence: model and experiment

Szmulowicz,F., Brown,G.J., Liu,H.C., Shen,A., Wasilewski,Z.R., Buchanan,M.

SPIE-The International Society for Optical Engineering
10 国際会議録 Modeling of normal incidence absorption in p-type GaAs/AlGaAs quantum well infrared detectors

G.J. Brown, F. Szmulowicz

Society of Photo-optical Instrumentation Engineers
5 国際会議録 Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized field

Cheah, C. W., Karunasiri, G., Tan, L. S.

MRS-Materials Research Society
11 国際会議録 Characterization and Modeling of GaAs/AlGaAs P-Type Multi-Quantum Wells for Infared Detection at Normal Incidence

Brown, G.J., Taferner, W.T., Hedge, S.M., Eyink, K.G., Szmulowicz, F., Mitchel, W.C., Solomon, J., Walck, S.D.

Electrochemical Society
6 国際会議録 Intersubband Transitions, Infrared Detectors, and Optical Nonlinearities in SiGe Multiquantum Wells

Helm, M., Kruck, P., Fromherz, T., Seto, M., Bauer, G., Nutzel, J. F., Abstreiter, G.

MRS - Materials Research Society
12 国際会議録 Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

Workman, Clayton L., Wang, Zhiming, Ma, Wenquan, George, Christi E., Selvam, R.Panneer, Salamo, Gregory J., Zhou, …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12