Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs

Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs

著者名:

Jones,E.D. ( Sandia National Labs. )

掲載資料名:

Physics and simulation of optoelectronic devices VIII : 24-28 January 2000, San Jose, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3944

発行年:

2000

巻:

Part1

開始ページ:

80

終了ページ:

87

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819435613 [0819435619]

言語:

英語

請求記号:

P63600/3944

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018107
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Physics and simulation of optoelectronic devices
回次:	2000 : 8th
会議開催地:	San Jose, CA, USA
会議開催年:	2000.01.24-2000.01.28

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