Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD

Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD

著者名:

Kim,S. ( Northwestern Univ. )
Erdtmann,M.
Razeghi,M.

掲載資料名:

Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3629

発行年:

1999

開始ページ:

371

終了ページ:

380

出版情報:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819430991 [0819430994]

言語:

英語

請求記号:

P63600/3629

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018078
シリーズID:	PA00000029
会議名:	Photonics West : Photodetectors
回次:	1999 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	1999.01.27-1999.01.29

類似資料:

1 国際会議録 Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD Kim, S., Razeghi, M. Electrochemical Society	7 国際会議録 High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization Tsao, S., Mi, K., Szafraniec, J., Zhang, W., Lim, H., Movaghar, B., Razeghi, M. SPIE - The International Society of Optical Engineering
2 国際会議録 Characteristics of InGaAs/InGaP Quantum Dot Infrared Photodetector Grown By Metal Organic Chemical Vapor Deposition Kim, Seongsin, Razeghi, M. Materials Research Society	8 国際会議録 InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications Tsao, S., Gin, A. V., Mi, K., Szafraniec, J., Zhang, W., Lim, H., O'Sullivan, T., Jiang, J., Razeghi, M., Brown, G. J., … SPIE - The International Society of Optical Engineering
3 国際会議録 The long wavelength luminescence observation from the self-organised InGaAs quantwn dots grown on(100)GaAs substrate by metalorganic chemical vapor deposition Kim,K.S., Erdtmann,M., Razeghi,M. Trans Tech Publications	9 国際会議録 Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate Erdtmann,M., Razeghi,M. SPIE-The International Society for Optical Engineering
4 国際会議録 Quantum dot intersubband photodetectors Jelen,C.L., Erdtmann,M., Kim,S., Razeghi,M. SPIE-The International Society for Optical Engineering	10 国際会議録 Mid-infrared emission in InAs/GaAs self-assembled quantum dots Boucaud, P., Sauvage, S., Brunhes, T., Glotin, F., Prazeres, R., Ortega, J. M., Thierry-Mieg, V., Lemaitre, A., Gerard, … MRS-Materials Research Society
5 国際会議録 High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition Erdtmann,M., Matlis,A.W., Jelen,C.L., Razeghi,M., Brown,C.J. SPIE - The International Society for Optical Engineering	11 国際会議録 Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array H. Lim, S. Tsao, W. Zhang, M. Razeghi SPIE - The International Society of Optical Engineering
6 国際会議録 Mid-infrared absorption in self-assembled Ge quantum dots grown on Si substrate Wu,W.-G., Liu,J.-L., Tang,Y.-S., Jin,G.-L., Wang,K.L. SPIE - The International Society for Optical Engineering	12 国際会議録 Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors Lee, S.-W., Park, C.J., Kang, T.W., Cho, H.Y., Hirakawa, K. SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12