MOVPE growth of HgCdTe for bandgap engineered IR detector arrays

MOVPE growth of HgCdTe for bandgap engineered IR detector arrays

著者名:

Mitra,P. ( Lockheed Martin Vought Systems )
Reine,M.B.

掲載資料名:

Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3629

発行年:

1999

開始ページ:

64

終了ページ:

73

出版情報:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819430991 [0819430994]

言語:

英語

請求記号:

P63600/3629

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018078
シリーズID:	PA00000029
会議名:	Photonics West : Photodetectors
回次:	1999 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	1999.01.27-1999.01.29

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