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DEEP LEVELS INDUCED BY SiCl4 REACTIVE ION ETCHING IN GaAs

著者名:
掲載資料名:
Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
325
発行年:
1994
開始ページ:
443
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992245 [1558992243]
言語:
英語
請求記号:
M23500/325
資料種別:
国際会議録

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