DOMINANT MIDGAP LEVELS IN THE COMPENSATION MECHANISM IN GaAs
- 著者名:
- 掲載資料名:
- Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 325
- 発行年:
- 1994
- 開始ページ:
- 425
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992245 [1558992243]
- 言語:
- 英語
- 請求記号:
- M23500/325
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
3
国際会議録
HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2
Materials Research Society |
9
国際会議録
Mask CD compensation method using diffraction intensity for lithography equivalent metrology
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |