GaN Etching in BCl3/Cl2 Plasmas

GaN Etching in BCl3/Cl2 Plasmas

著者名:

Shul, R. J.

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

487

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

1 国際会議録 Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas Shul, R. J., Zhang, L., Willison, C. G., Han, J., Pearton, S. J., Hong, J., Abernathy, C. R., Lester, L. F. MRS - Materials Research Society	7 国際会議録 Selective Etching of Wide-Bandgap Nitrides Shul, R. J., Willison, C. G., Bridges, M. M., Han, J., Lee, J. W., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., … MRS - Materials Research Society
2 国際会議録 High-Density Plasma Etching of Group-III Nitride Films for Device Application Shul, R., Zhang, L, Baca, A., Han, J., Crawford, M., Willison, C., Pearton, S., Ren, F., Zolper, J., Lester, L. Electrochemical Society	8 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society
3 国際会議録 Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas Shul, R. J., Briggs, R. D., Han, J., Pearton, S. J., Lee, J. W., Vartuli, C. B., Killeen, K. P., Ludowise, M. J. MRS - Materials Research Society	9 国際会議録 Comparison of Dry-Etch Techniques for GaN, InN, and AlN Shul, R. J., Vawter, G. A., Willison, C. G., Bridges, M. M., Lee, J. W., Pearton, S. J., Abernathy, C. R. MRS - Materials Research Society
4 国際会議録 High-density plasma-induced etch damage of GaN Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J., Pearton, S.J., Ren, F., Zolper, J.C., Lester, L.F. Materials Research Society	10 国際会議録 In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon Lee, J. W., Pearton, S. J., Abernathy, C. R., Vawter, G. A., Shul, R. J., Bridges, M. M., Willison, C. G. MRS - Materials Research Society
5 国際会議録 ECR Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2 Shul, R. J., Baca, A. G., Rieger, D. J., Hou, H., Pearton, S. J., Ren, F. MRS - Materials Research Society	11 国際会議録 Plasma Chemistry Dependent ECR Etching of GaN Shul, R. J., Ashby, C. I. H., Rieger, D. J., Howard, A. J., Pearton, S. J., Abernathy, C. R., Vartuli, C. B., Barnes, P. … MRS - Materials Research Society
6 国際会議録 Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs Shul, Randy J., Zhang, L., Baca, A.G., Willison, Christi G., Hans, J., Pearton, S.J., Lee, K.P., Ren, F. Materials Research Society	12 国際会議録 Fabrication and characterization of GaN junction field effect transistors Zhang, L., Lester, L. F., Baca, A. G., Shul, R. J., Chang, P. C., Willison, C. G., Mishra, U. K., DenBaars, S. P., … MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12