Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System

Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System

著者名:

Cao, X. A.

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

463

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

1 国際会議録 Repid Thermal Processing of Implanted GaN Up to 1500°C Cao, X. A., Pearton, S. J., Singh, R. K., Abernathy, C. R., Han, J., Shul, R. J., Rieger, D. J., Zolper, J. C., Wilson, … MRS - Materials Research Society	7 国際会議録 High temperature Stable W and WSi contacts on n- and p-GaN Cao, X.A., Ren, F., Pearton, S.J., Zeitouny, A., Eisenber, M., Zopler, J.C., Abernathy, C.R., Han, J., Shul, R.J., … Electrochemical Society
2 国際会議録 A Novel Technique for RTP Annealing of Compound Semiconductors Fu, M., Sarvepalli, V., Singh, R. K., Abernathy, C. R., Cao, X., Pearton, S. J., Sekhar, J. A. MRS - Materials Research Society	8 国際会議録 The Role of AlN Encapsulation of GaN During Implant Activation Annealing Zolper, J.C., Pearton, S.J., Rieger, D.J., Baca, A.G., Lee, J.W., Vartulli, C.R., Stall, R.A. Electrochemical Society
3 国際会議録 Activation characteristics of donor and acceptor implants in GaN Cao, X. A., Pearton, S. J., Singh, R. K., Wilson, R. G., Sekhar, J. A., Zolper, J. C., Han, J., Rieger, D. J., Shul, R. … MRS-Materials Research Society	9 国際会議録 III-Nitride ion implantation and device processing Zolper, J.C., Shul, R.J., Baca, A.G., Pearton, S.J., Abernathy, C.R., Wilson, R.G., Stall, R.A., Shur, M. Electrochemical Society
4 国際会議録 Behavior of W and WSix Contact Metallization on n- and P-Type GaN Cao, X. A., Ren, F., Lothian, J. R., Pearton, S. J., Abernathy, C. R., Zolper, J. C., Cole, M. W., Zeitouny, A., … MRS - Materials Research Society	10 国際会議録 Properties of H, O and C in GaN Pearton, S. J., Abernathy, C. R., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Ren, F., Wilson, R. G., Zavada, J. M., … MRS - Materials Research Society
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