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Polarity of GaN

著者名:
Liliental-Weber, Z.
Benamara, M.
Richter, O.
Swider, W.
Washburn, J.
Grzegory, I.
Porowski, S.
Yang, J. W.
Nakamura, S.
さらに 4 件
掲載資料名:
Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
512
発行年:
1998
開始ページ:
363
出版情報:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994188 [1558994181]
言語:
英語
請求記号:
M23500/512
資料種別:
国際会議録

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1 国際会議録 Mg, segregation, difficulties of P-doping in GaN

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7 国際会議録 TEM Study Of High Quality GaN Grown By OMVPE Using An Intermediate Layer

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2 国際会議録 TEM study of Mg-doped bulk GaN crystals

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8 国際会議録 Structural Defects in Heteroepitaxial and Homoepitaxial GaN

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3 国際会議録 The role of the multi buffer layer technique on the structural quality of GaN

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9 国際会議録 Atomic scale analysis of InGaN multi-quantum wells

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4 国際会議録 Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells

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10 国際会議録 Effect of the doping and the Al content on the microstructure and morphology of thin Alx Ga1-xN layers grown by MOCVD

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5 国際会議録 TEM Study of Defects in Laterally Overgrown GaN Layers

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11 国際会議録 Effect of Si Doping on the Structure of GaN

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6 国際会議録 Nanotubes in GaN

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12 国際会議録 Structural and Optical Properties of Homoepitaxial GaN Layers

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