Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular-Beam Epitaxy Using NH3

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular-Beam Epitaxy Using NH3

著者名:

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

69

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

1 国際会議録 Si-and Mg-Doped GaN Layers Grown by Gas Source Molecular-Beam Epitaxy Using Ammonia Grandjean, N., Massies, M., Leroux, M. MRS - Materials Research Society	7 国際会議録 High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society
2 国際会議録 Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy Grandjean, N., Massies, J., Leroux, M., Laugt, M., Lefebvre, P., Gil, B., Allegre, J., Bigenwald, P. MRS - Materials Research Society	8 国際会議録 From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization Leroux, M., Lahreche, H., Semond, F., Lauegt, M., Feltin, E., Schnell, N., Beaumont, B., Gibart, P., Massies, J. Trans Tech Publications
3 国際会議録 Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties Grandjean, N., Massies, J., Leroux, M., Laugt, M., Vennegues, P., Dalmasso, S., Ruterana, P., Hirsch, L., Barriere, S. MRS - Materials Research Society	9 国際会議録 High-quality GaN grown by molecular beam epitaxy on Ge(001) Siegle, H., Kim, Y., Sudhir, G. S., Kruger, J., Perlin, P., Ager III, J. W., Kisielowski, C., Weber, E. R. MRS-Materials Research Society
4 国際会議録 Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth Grandjean, N., Massies, J., Vennegues, P., Laugt, M., Leroux, M. MRS - Materials Research Society	10 国際会議録 (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 μm low threshold lasers Damilano, B., Barjon, J., Hugues, M., Duboz, J. -Y., Massies, J., Ulloa, J. -M., Montes, M., Hierro, A. SPIE - The International Society of Optical Engineering
5 国際会議録 Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE Leroux, M., Beaumont, B., Grandjean, N., Massies, J., Gibart, P. MRS - Materials Research Society	11 国際会議録 Modulation of Arsenic Incorporation In GaN Layers Grown by Molecular Beam Epitaxy Novikov, S.V., Zhao, L.X., Foxon, C.T., Ber, B.Ja., Kovarsky, A.P., Harrison, I., Fay, M.W., Brown, P.D. Materials Research Society
6 国際会議録 Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells Lefebvre, P., Gil, B., Allegre, J., Mathieu, H., Grandjean, N., Leroux, M., Massies, J., Bigenwald, P. MRS - Materials Research Society	12 国際会議録 Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire … H.Y. Liu, V. Avrutin, N. Izyumskaya, M.A. Reshchikov, S. Wolgast, C. Kurdak, A.B. Yankovich, A. Kvit, P. Voyles, Ü. … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12