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High-Resolution X-ray-Diffraction Analysis of "Device-Quality" Cubic GaN Grown on (001)GaAs Substrate Prepared by Atomic-Hydrogen Treatment at High Temperatures

著者名:
Yoshikawa, A.
Qin, Z. X.
Nagano, H.
Sugure, Y.
Jia, A. W.
Kobayashi, M.
Shimotomai, M.
Kato, Y.
Takahashi, K.
さらに 4 件
掲載資料名:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
482
発行年:
1998
開始ページ:
465
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
言語:
英語
請求記号:
M23500/482
資料種別:
国際会議録

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