Interactions of LO Phonons With Bound Excitons in Homoepitaxial GaN | 東京工業大学附属図書館文献データベース

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Interactions of LO Phonons With Bound Excitons in Homoepitaxial GaN

著者名:

Baranowski, J. M.

さらに 3 件

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

501

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

類似資料:

1 国際会議録 Exciton Dynamics in Homoepitaxial GaN Monemar,B., Bergman,J.P., Ivanov,I.G., Baranowski,J.M., Pakula,K., Grzegory,I., Porowski,S. Trans Tech Publications	7 国際会議録 Structural Defects in Heteroepitaxial and Homoepitaxial GaN Lillental-Weber, Zuzanna, Ruvimov, S., Kisielowski, Ch., Chen, Y., Swider, W., Washburn, J., Newman, N., Gassmann, A., … MRS - Materials Research Society
2 国際会議録 Structural and Optical Properties of Homoepitaxial GaN Layers Baranowski, J. M., Liliental-Weber, Z., Korona, K., Pakula, K., Stepniewski, R., Wysmolek, A., Grzegory, I., Nowak, G., … MRS - Materials Research Society	8 国際会議録 Observation of Native Ga Vacancies in GaN by Positron Annihilation Saarinen, K., Laine, T., Kuisma, S., Nissila, J., Hautojarvi, P., Dobrzynski, L., Baranowski, J. M., Pakula, K., … MRS - Materials Research Society
3 国際会議録 Photoluminescenee dynamics in the near bandgap region of homoepitaxial GaN layers Korona,K.P., Bergman,J.P., Monemar,B., Baranowski,J.M., Pakula,K., Grzegory,I., Porowski,S. Trans Tech Publications	9 国際会議録 GaN Crystals Grown in the Increased Volume High-Pressure Reactors Porowski, S., Bockowski, M., Lucznik, B., Wroblewski, M., krukowski, S., Grzegory, I., Leszczynski, M., Nowak, G., … MRS - Materials Research Society
4 国際会議録 Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN Wojdak, M., Baranowski, J.M., Wysmolek, A., Pakula, K., Stepniewski, R., Potemski, M., Grzegory, I., Porowski, S. Materials Research Society	10 国際会議録 Exciton dynamics in homoepitaxial GaN in the picosecond regime Korona,K.P. SPIE-The International Society for Optical Engineering
5 国際会議録 Luminescence of a New Material: GaN Grown on NdGaO3 Korona, K. P., Pakula, K., Wysmolek, A., Baranowski, J. M., Bergman, J. P., Monemar, B., Lukasiewicz, T., Luczynski, Z. MRS - Materials Research Society	11 国際会議録 Time-Resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaN Monemar, Bo, Paskov, P. P., Bergman, J. P., Malinuaskas, T., Jarasiunas, K., Toporov, A. A., Shubina, T. V., Usui, A. Materials Research Society
6 国際会議録 Growth and Properties of Bulk Single Crystals of GaN Suski, T., Perlin, P., Leszczynski, M., Teisseyre, H., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., Pakula, K., … MRS - Materials Research Society	12 国際会議録 Exciton Lifetimes in GaN Bergman, J. P., Harris, C., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society

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