Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells
- 著者名:
Liliental-Weber, Z. Ruvimov, S. Swider, W. Kim, Y. Washburn, J. Nakamura, S. Kern, R. S. Chen, Y. Yang, J. W. - 掲載資料名:
- Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 482
- 発行年:
- 1998
- 開始ページ:
- 375
- 出版情報:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993877 [1558993878]
- 言語:
- 英語
- 請求記号:
- M23500/482
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS-Materials Research Society |
MRS-Materials Research Society |
10
国際会議録
Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |