AIN/GaN and AlGaN/GaN Heterostructures Grown by HVPE on SiC Substrates | 東京工業大学附属図書館文献データベース

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AIN/GaN and AlGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

著者名:

Nikolaev, A. E.

Stepanov, S. I.

Zubrilov, A. S.

Nikitina, I. P.

Vassilevski, K. V.

Tsvetkov, D. V.

Musikhin, Yu. G.

Tretyakov, V. V.

Dmitriev, V. A.

さらに 6 件

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

245

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

類似資料:

1 国際会議録 HVPE GaN and AIGaN Substrates for Homoepitaxy Melnik,Yu., Nikolaev,A., Stepanov,S., Kikitina,I., Vassilevski,K., Ankudinov,A., Musikhin,Yu., Dmitriev,V. Trans Tech Publications	7 国際会議録 Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers Dmitriev, V., Nikolaev, A., Cherenkov, A., Tsvetkov, D., Stepanov, S., Kuznetsov, N., Nikitina, I., Kovarsky, A., … MRS - Materials Research Society
2 国際会議録 Properties of Freestanding GaN Bulk Crystals Grown by HVPE Melnik, Yu., Nikolaev, A., Nikitina, I., Vassilevski, K., Dmitriev, V. MRS - Materials Research Society	8 国際会議録 GaN p-n Structures Grown by Hydride Vapor-Phase Epitaxy Nikolaev, A. E., Melnik, Yu. V., Kuznetsov, N. I., Strelchuk, A. M., Kovarsky, A. P., Vassilevski, K. V., Dmitriev, V. … MRS - Materials Research Society
3 国際会議録 GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates Mynbaeva, M., Titkov, A., Kryzhanovski, A., Zubrilov, A., Ratnikov, V., Davydov, V., Kuznetsov, N., Mynbaev, K., … MRS-Materials Research Society	9 国際会議録 Growth of SiC and GaN on Porous Buffer Layers Mynbaeva, M., Savkina, N. S., Tregubova, A. S., Scheglov, M. P., Lebedev, A. A., Zubrilov, A., Titkov, A., Kryganovski, … Trans Tech Publications
4 国際会議録 Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure Sukhoveyev,V., Ivantsov,V., Zubrilov,A., Nikolaev,V., Nikitina,I., Bougrov,V., Tsvetkov,D., Dmitriev,V. Trans Tech Publications	10 国際会議録 Recent progress in AIGaN/GaN laser structures on 6H-SiC Bulman,G.E., Edmond,J.A., Dmitriev,V.A., Kong,H.-S., Leonard,M.T., Irvine,K.G., Nikolaev,V.I., Zubrilov,A.S., … SPIE-The International Society for Optical Engineering
5 国際会議録 HVPE-Grown AlGaN/GaN HEMTs Luo, B., Ren, F., Mastro, M. A., Tsvetkov, D., Pechnikov, A., Soukhoveev, V., Dmitriev, V., Baik, K. H., Pearton, S. J. Materials Research Society	11 国際会議録 High-quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Peralta, L. Grave de, Seryogin, G. A., Holtz, M., … MRS-Materials Research Society
6 国際会議録 AlGaN/GaN Structures Grown by HVPE: Growth and Characterization Mastro, M. A., Tsvetkov, D. V., Pechnikov, A. I., Soukhoveev, V. A., Gainer, G. H., Usikov, A., Dmitriev, V., Luo, B., … Materials Research Society	12 国際会議録 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates Kuznetsov, N., Morozov, A., Baumann, D., Ivantsov, V., Sukhoveev, V., Nikitina, I., Zubrilov, A., Rendakova, S., … Trans Tech Publications

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