Stress-Controlled MBE Growth of GaN:Mg and GaN:Si | 東京工業大学附属図書館文献データベース

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Stress-Controlled MBE Growth of GaN:Mg and GaN:Si

著者名:

Klockenbrink, R.

Kisielowski, C.

さらに 5 件

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

217

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

類似資料:

1 国際会議録 Photoluminescence Characterization of p-Type GaN:Mg Corlatan, Dorina, Kruger, Joachim, Kisielowski, Christian, Klockenbrink, Ralf, Kim, Yihwan, Sudhir, G. S., Peyrot, Yann, … MRS - Materials Research Society	7 国際会議録 Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures Kruger, Joachim., Kisielowski, Christian, Klockenbrink, Ralf, Sudhir, G. S., Kim, Yihwan, Rubin, Michael, Weber, Eicke … MRS - Materials Research Society
2 国際会議録 Photohuninescence of donor acceptor pair transitions in hexagonal and cubic MBE-grown GaN Kruger,J., Corlatan,D., Kisielowski,C., Kim,Y., Klockenbrink,R., Sudhir,G.S., Rubin,M., Weber,E.R. Trans Tech Publications	8 国際会議録 Impact of Growth Temperature, Pressure, and Strain on the Morphology of GaN Films Fujii, H., Kisielowski, C., Kruger, J., Leung, M. S. H., Klockenbrink, R., Rubin, M., Weber, E. R. MRS - Materials Research Society
3 国際会議録 MBE Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant Klockenbrink, R., Kim, Y., Leung, M. S. H., Kisielowski, C., Kruger, J., Sudhir, G. S., Rubin, M., Weber, E. R. MRS - Materials Research Society	9 国際会議録 High-quality GaN grown by molecular beam epitaxy on Ge(001) Siegle, H., Kim, Y., Sudhir, G. S., Kruger, J., Perlin, P., Ager III, J. W., Kisielowski, C., Weber, E. R. MRS-Materials Research Society
4 国際会議録 Effect of Mg, Zn, Si, and O on the Lattice Constant of Gallium Nitride Thin Films Sudhir, G. S., Peyrot, Y., Kruger, J., Kim, Y., Klockenbrink, R., Kisielowski, C., Rubin, M. D., Weber, E. R., … MRS - Materials Research Society	10 国際会議録 Properties of Homoepitaxially MBE-Grown GaN Suski, T., Krueger, J., Kisielowski, C., Phatak, P., Leung, M. S. H., Liliental-Weber, Z., Gassmann, A., Newman, N., … MRS - Materials Research Society
5 国際会議録 Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source Leung, M. S. H., Klockenbrink, R., Kisielowski, C., Fujii, H., Kruger, J., S., Sudhir G., Anders, A., Liliental-Weber, … MRS - Materials Research Society	11 国際会議録 Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer Ruvimov, S., Liliental-Weber, Z., Washburn, J., Kim, Y., Sudhir, G. S., Krueger, J., Weber, E. R. MRS-Materials Research Society
6 国際会議録 Comparative Analysis of Strain and Stress in MBE- and MOCVD-Grown GaN Thin films on Sapphire Kruger, Joachim, Sudhir, G. S., Corlatan, Dorina, Cho, Yonah, Kim, Yihwan, Klockenbrink, Ralf, Rouvimov, Sergei, … MRS - Materials Research Society	12 国際会議録 Improved Heteroepitaxial MBE GaN Growth With A Ga Metal Buffer Layer Kim, Yihwan, Subramanya, Sudhir G., Krueger, Joachim, Siegle, Henrik, Shapiro, Noad, Armitage, Robert, Feick, Henning, … Materials Research Society

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