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Dark Current Reduction in Near Infrared p-i-n Detector Diodes Fabricated from In.75Ga.25As Grown by Molecular-Beam Epitaxy on InP Substrates

著者名:
Micovic, M.
Cai, W. Z.
Ren, Y.
Neal, J.
Nelson, S. F.
Mayer, T. S.
Miller, D. L.
さらに 2 件
掲載資料名:
Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
450
発行年:
1997
開始ページ:
219
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993549 [1558993541]
言語:
英語
請求記号:
M23500/450
資料種別:
国際会議録

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