InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 ヲフm
- 著者名:
- 掲載資料名:
- Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 450
- 発行年:
- 1997
- 開始ページ:
- 3
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993549 [1558993541]
- 言語:
- 英語
- 請求記号:
- M23500/450
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
2
国際会議録
Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05ヲフm
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
MRS-Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |