Annealing Properties of Defects in BF2+-Implanted Si | 東京工業大学附属図書館文献データベース

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Annealing Properties of Defects in BF2+-Implanted Si

著者名:

さらに 6 件

掲載資料名:

Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

439

発行年:

1997

開始ページ:

143

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993433 [1558993436]

言語:

英語

請求記号:

M23500/439

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017990
シリーズID:	PA00000011
会議名:	Symposium on microstructure evolution during irradiation
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.05

類似資料:

1 国際会議録 Annealing Properties of Defects in BF2+ Implanted Si Kitano, T., Watanabe, M., Yaoita, A., Oguro, S., Uedono, A., Moriya, T., Tanigawa, S., Kawano, T., Suzuki, R., Ohdaira, … MRS - Materials Research Society	7 国際会議録 Positron Lifetime Study on Semiconductor Thin Films Suzuki,R., Ohdaira,T., Uedono,A., Ishibashi,S., Matsuda,A., Yoshida,S., Ishida,Y., Niki,S., Fons,P.J., Mikado,T., … Trans Tech Publications
2 国際会議録 Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon Watanabe, M., Kitano, T., Asada, S., Uedono, A., Moriya, T., Kawano, T., Tanigawa, S., Suzuki, R., Ohdaira, T., Mikado, … MRS - Materials Research Society	8 国際会議録 Positron Beam Study of Defects Induced in Ar-Implanted Si Miyagoe, T., Fujinami, M., Sawada, T., Suzuki, R., Ohdaira, T., Akahane, T. Trans Tech Publications
3 国際会議録 Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon Watanabe, M., Kitano, T., Asada, S., Uedono, A., Moriya, T., Kawano, T., Tanigawa, S., Suzuki, R., Ohdaira, T., Mikado, … MRS - Materials Research Society	9 国際会議録 EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM Kametani, H., Akiyama, H., Yamaguchi, Y., Koumaru, M,, Wei, L., Tabuki, Y., Tanigawa, S., Uedono, A., Watauchi, S., … Materials Research Society
4 国際会議録 Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation Ohshima,T., Uedono,A., Itoh,H., Abe,K., Suzuki,R., Ohdaira,T., Aoki,Y., Yoshikawa,M., Mikado,T., Okumura,H., Yoshida,S., … Trans Tech Publications	10 国際会議録 Depth Dependence of Defects in Ion-Implanted Si Probed by a Positron Beam Fujinami, M., Miyagoe, T., Sawada, T., Suzuki, R., Ohdaira, T., Akahane, T. Trans Tech Publications
5 国際会議録 Moderation of Positrons Generated by an Electron Linac Suzuki,R., Ohdaira,T., Mikado,T., Uedono,A., Ohgaki,H., Yamazaki,T., Tanigawa,S. Trans Tech Publications	11 国際会議録 Electrical and Structural Properties of Al and B Implanted 4H-SiC Tanaka, Y., Kobayashi, N., Okumura, H., Suzuki, R., Ohdaira, T., Hasegawa, M., Ogura, M., Yoshida, S., Tanoue, H. Trans Tech Publications
6 国際会議録 Time-of-Flight Analysis of Positron-Annihilation Induced Auger-Electrons and Re-Emitted Positrons Ohdaira, T., Suzuki, R., Mikado, T. Trans Tech Publications	12 国際会議録 Auger Line Shape Analysis by Time-of-Flight Positron-Annihilation Induced Auger-Electron Spectroscopy Ohdaira,T., Suzuki,R., Mikado,T., Yamazaki,T. Trans Tech Publications

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