Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

著者名:

掲載資料名:

Rapid thermal and integrated processing V : symposium held April 8-12, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

429

発行年:

1996

開始ページ:

233

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993327 [1558993320]

言語:

英語

請求記号:

M23500/429

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017989
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	5th
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

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