Anion Exchange Reactions and Initial GaN Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface

Anion Exchange Reactions and Initial GaN Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface

著者名:

掲載資料名:

Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

388

発行年:

1995

開始ページ:

259

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992917 [155899291X]

言語:

英語

請求記号:

M23500/388

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017985
シリーズID:	PA00000011
会議名:	Symposium on film synthesis and growth using energetic beams
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.20

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